Main > Chinese Optics Letters >  Volume 17 >  Issue 2 >  Page 020005 > Article
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• Received: Oct. 27, 2018

Accepted: Nov. 29, 2018

Posted: Feb. 14, 2019

Published Online: Feb. 14, 2019

The Author Email: Tian Jiang (tjiang@nudt.edu.cn)

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Tian Jiang, Runlin Miao, Jie Zhao, Zhongjie Xu, Tong Zhou, Ke Wei, Jie You, Xin Zheng, Zhenyu Wang, Xiang'ai Cheng. Electron–phonon coupling in topological insulator Bi2Se3 thin films with different substrates[J]. Chinese Optics Letters, 2019, 17(2): 020005

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## Abstract

Broadband transient reflectivity traces were measured for $Bi2Se3$ thin films with various substrates via a 400 nm pump–white-light-probe setup. We have verified the existence of a second Dirac surface state in $Bi2Se3$ and qualitatively located it by properly analyzing the traces acquired at different probe wavelengths. Referring to the band structure of $Bi2Se3$, the relaxation mechanisms for photo-excited electrons with different energies are also revealed and studied. Our results show a second rise of the transient reflection signal at the time scale of several picoseconds. The types of substrate can also significantly affect the dynamics of the rising signal. This phenomenon is attributed to the effect of lattice heating and coherent phonon processes. The mechanism study in this work will benefit the fabrication of high-performance photonic devices based on topological insulators.

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