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  • Received: Oct. 27, 2018

    Accepted: Nov. 29, 2018

    Posted: Feb. 14, 2019

    Published Online: Feb. 14, 2019

    The Author Email: Tian Jiang (tjiang@nudt.edu.cn)

    DOI: 10.3788/COL201917.020005

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    Tian Jiang, Runlin Miao, Jie Zhao, Zhongjie Xu, Tong Zhou, Ke Wei, Jie You, Xin Zheng, Zhenyu Wang, Xiang'ai Cheng. Electron–phonon coupling in topological insulator Bi2Se3 thin films with different substrates[J]. Chinese Optics Letters, 2019, 17(2): 020005

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Chinese Optics Letters, Vol. 17, Issue 2, 020005 (2019)

Electron–phonon coupling in topological insulator Bi2Se3 thin films with different substrates

Tian Jiang1,2,3,*, Runlin Miao1, Jie Zhao1, Zhongjie Xu1, Tong Zhou2, Ke Wei1, Jie You4, Xin Zheng4, Zhenyu Wang4, and Xiang'ai Cheng1

Author Affiliations

  • 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 2State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
  • 3Interdisciplinary Center of Quantum Information, National University of Defense Technology, Changsha 410073, China
  • 4National Institute of Defense Technology Innovation, Academy of Military Sciences PLA China, Beijing 100010, China

Abstract

Broadband transient reflectivity traces were measured for Bi2Se3 thin films with various substrates via a 400 nm pump–white-light-probe setup. We have verified the existence of a second Dirac surface state in Bi2Se3 and qualitatively located it by properly analyzing the traces acquired at different probe wavelengths. Referring to the band structure of Bi2Se3, the relaxation mechanisms for photo-excited electrons with different energies are also revealed and studied. Our results show a second rise of the transient reflection signal at the time scale of several picoseconds. The types of substrate can also significantly affect the dynamics of the rising signal. This phenomenon is attributed to the effect of lattice heating and coherent phonon processes. The mechanism study in this work will benefit the fabrication of high-performance photonic devices based on topological insulators.

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