Main > Chinese Optics Letters >  Volume 6 >  Issue 5 >  Page 361 > Article
  • Abstract
  • Abstract
  • References (12)
  • Suppl. Mat.
  • Cited By (1/0)
  • Get PDF
  • Paper Information
  • Received: Oct. 23, 2007

    Accepted: --

    Posted: May. 20, 2008

    Published Online: May. 20, 2008

    The Author Email: Jian Li (lijian@sdnu.edu.cn)

    DOI:

  • Get Citation
  • Copy Citation Text

    Huilan Liu, Yao Sun, Shuaiyi Zhang, Tao Li, Jian Li. 5.1-ps passively mode-locked Nd:Gd0.42Y0.58VO4 laser with a LT-GaAs absorber[J]. Chinese Optics Letters, 2008, 6(5): 361

    Download Citation

  • Share
Chinese Optics Letters, Vol. 6, Issue 5, 361 (2008)

5.1-ps passively mode-locked Nd:Gd0.42Y0.58VO4 laser with a LT-GaAs absorber

Huilan Liu, Yao Sun, Shuaiyi Zhang, Tao Li, and Jian Li*

Author Affiliations

  • Department of Physics, Dezhou University, Dezhou 2530232 College of Physics and Electronics, Shandong Normal University, Ji'nan 2500143 Qingdao 53rd middle school, Qingdao 266034

Abstract

We propose a diode end-pumped passively mode-locked Nd:Gd0.42Y0.58VO4 (Nd:GdYVO4 laser at 1064 nm using a GaAs absorber grown at low temperature as the output coupler. Stable continuous-wave (CW) mode locking with a 5.1-ps pulse duration at a repetition rate of 113 MHz is obtained. The maximum average output power is 2.29 W at the incident pump power of 12 W with the slope efficiency of about 24.8%.

keywords