Photonics Research, Vol. 8, Issue 12, 12001888 (2020)
Comparison of growth structures for continuous-wave electrically pumped 1.55 μ m quantum dash lasers grown on (001) Si
Wei Luo1,2,†, Ying Xue1,†, Jie Huang1, Liying Lin1, Bei Shi1, and Kei May Lau1,*

Author Affiliations

- 1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
- 2e-mail: wluoag@connect.ust.hk
Abstract
Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash (QDash) lasers on native InP substrate emitting at 1.5 μm (C-band) have demonstrated notable performance, the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8% lattice mismatch between InP and silicon. Here we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard (001) silicon substrates by metalorganic chemical vapor deposition. A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal (001) silicon. With the optimized QDash growth and improved fabrication process, the lowest threshold current density of
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