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  • Received: Jul. 28, 2020

    Accepted: Oct. 5, 2020

    Posted: Oct. 7, 2020

    Published Online: Nov. 23, 2020

    The Author Email: Kei May Lau (eekmlau@ust.hk)

    DOI: 10.1364/PRJ.403938

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    Wei Luo, Ying Xue, Jie Huang, Liying Lin, Bei Shi, Kei May Lau. Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si[J]. Photonics Research, 2020, 8(12): 12001888

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Photonics Research, Vol. 8, Issue 12, 12001888 (2020)

Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si

Wei Luo1,2,†, Ying Xue1,†, Jie Huang1, Liying Lin1, Bei Shi1, and Kei May Lau1,*

Author Affiliations

  • 1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
  • 2e-mail: wluoag@connect.ust.hk

Abstract

Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash (QDash) lasers on native InP substrate emitting at 1.5 μm (C-band) have demonstrated notable performance, the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8% lattice mismatch between InP and silicon. Here we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard (001) silicon substrates by metalorganic chemical vapor deposition. A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal (001) silicon. With the optimized QDash growth and improved fabrication process, the lowest threshold current density of 1.5 kA/cm2 was determined on an 8 μm×1.5 mm device on planar silicon with a single facet output power exceeding 14 mW. The device results illustrate the good material quality of the QDash lasers grown on silicon, suggesting potential applications for other active components of photonic integrated circuits, such as semiconductor optical amplifiers, modulators, and photodetectors.

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