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  • Received: Apr. 4, 2018

    Accepted: May. 3, 2018

    Posted: --

    Published Online: Oct. 7, 2018

    The Author Email: SHEN Guozhen (gzshen@semi.ac.cn)

    DOI: 10.1007/s12200-018-0820-2

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    Zidong ZHANG, Juehan YANG, Fuhong MEI, Guozhen SHEN. Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity[J]. Frontiers of Optoelectronics, 2018, 11(3): 245

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Frontiers of Optoelectronics, Vol. 11, Issue 3, 245 (2018)

Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

Zidong ZHANG1,2, Juehan YANG1, Fuhong MEI2, and Guozhen SHEN1,3,*

Author Affiliations

  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials, Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
  • 3College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China

Abstract

Longitudinal twinning α-In2Se3 nanowires with the (1018) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2 V–1 S–1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 105 A W–1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 × 1012 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.1)

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