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  • Received: Mar. 16, 2020

    Accepted: Apr. 13, 2020

    Posted: Sep. 1, 2020

    Published Online: Sep. 16, 2020

    The Author Email: Qin Shuijie (

    DOI: 10.3788/CJL202047.0913001

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    Pengcheng Liu, Mengyu Chang, Zhongchen Bai, Shuijie Qin. Enhanced Fluorescence of CdSe/Al2O3 Heterojunctions Enabled by TiN Nanoparticles[J]. Chinese Journal of Lasers, 2020, 47(9): 0913001

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Chinese Journal of Lasers, Vol. 47, Issue 9, 0913001 (2020)

Enhanced Fluorescence of CdSe/Al2O3 Heterojunctions Enabled by TiN Nanoparticles

Liu Pengcheng1, Chang Mengyu1,2, Bai Zhongchen1,2, and Qin Shuijie1,*

Author Affiliations

  • 1Guizhou Province Key Laboratory for Photoelectric Technology and Applications, Guizhou University, Guiyang, Guizhou 550025, China
  • 2College of Medicine, Guizhou University, Guiyang, Guizhou 550025, China


The enhanced fluorescence effect of the heterojunction of CdSe quantum dots and a porous Al2O3 film was experimentally studied by using TiN nanoparticles (NPs). TiN NPs were deposited on the surface of porous Al2O3 film. Then, the CdSe QDs were self-assembled on the surface of TiN/Al2O3 film to prepare the CdSe/TiN/Al2O3 heterojunction. At the same time, the surface enhanced fluorescence effect was observed on the platform of a scanning near-field optical microscope. The results have showed that the interfacial fluorescence from the porous Al2O3 film was enhanced due to the increase of poto-generated carriers resulted in by TiN Nps from the CdSe QDs to the porous Al2O3 film. These results based on this paper could be widely applied for many fields of photovoltaic, lightshows, optical sensors devices and nano-biological imaging system.


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