Main > Photonics Research >  Volume 7 >  Issue 7 >  Page 07000B41 > Article
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Accepted: May. 2, 2019

Posted: Jun. 21, 2019

Published Online: Jun. 21, 2019

The Author Email: Erdan Gu (erdan.gu@strath.ac.uk)

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Xiangyu He, Enyuan Xie, Mohamed Sufyan Islim, Ardimas Andi Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas, Martin D. Dawson. 1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm[J]. Photonics Research, 2019, 7(7): 07000B41

The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride micro-light-emitting diodes (μLEDs) emitting in the UV-C region and their applications in deep-UV communication systems. The fabricated UV-C μLEDs with $566 μm2$ emission area produce an optical power of 196 μW at the $3400 A/cm2$ current density. The measured 3 dB modulation bandwidth of these μLEDs initially increases linearly with the driving current density and then saturates as 438 MHz at a current density of $71 A/cm2$, which is limited by the cutoff frequency of the commercial avalanche photodiode used for the measurement. A deep-UV communication system is further demonstrated. By using the UV-C μLED, up to 800 Mbps and 1.1 Gbps data transmission rates at bit error ratio of $3.8×10 3$ are achieved assuming on-off keying and orthogonal frequency-division multiplexing modulation schemes, respectively.