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  • Received: Jun. 12, 2015

    Accepted: Jul. 31, 2015

    Posted: Jan. 23, 2019

    Published Online: Sep. 13, 2018

    The Author Email: Yang Shen (920778028@qq.com), Liang Chen (LChen@cjlu.edu.cn)

    DOI: 10.3788/COL201513.100401

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    Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian. Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research[J]. Chinese Optics Letters, 2015, 13(10): 100401

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Chinese Optics Letters, Vol. 13, Issue 10, 100401 (2015)

Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research

Yang Shen1,*, Liang Chen1,2,**, Shuqin Zhang1, and Yunsheng Qian2

Author Affiliations

  • 1Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
  • 2School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Abstract

Using the first-principles method based on the density functional theory (DFT), the work function of seven different GaN (0001) (1×1) surface models is calculated. The calculation results show that the optimal ratio of Cs to O for activation is between 31 and 41. Then, Cs/O activation and stability testing experiments on reflection-mode negative electron affinity GaN photocathodes are performed. The surface model [GaN (Mg): Cs] Cs-O after being activated with cesium and oxygen is used. The experiment results illustrate that the adsorption of O contained in the residual gas increases the surface potential barrier and the reduction of the effective dipole quantity is the basic cause of the quantum efficiency decay.