Main > Chinese Optics Letters >  Volume 13 >  Issue 10 >  Page 100401 > Article
  • Abstract
  • Abstract
  • Figures (5)
  • Tables (1)
  • Equations (1)
  • References (36)
  • Cited By (1)
  • Get PDF
  • View Full Text
  • Paper Information
  • Received: Jun. 12, 2015

    Accepted: Jul. 31, 2015

    Posted: Jan. 23, 2019

    Published Online: Sep. 13, 2018

    The Author Email: Yang Shen (, Liang Chen (

    DOI: 10.3788/COL201513.100401

  • Get Citation
  • Copy Citation Text

    Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian. Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research[J]. Chinese Optics Letters, 2015, 13(10): 100401

    Download Citation

  • Category
  • Detectors
  • Share
Chinese Optics Letters, Vol. 13, Issue 10, 100401 (2015)

Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research

Yang Shen1,*, Liang Chen1,2,**, Shuqin Zhang1, and Yunsheng Qian2

Author Affiliations

  • 1Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
  • 2School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China


Using the first-principles method based on the density functional theory (DFT), the work function of seven different GaN (0001) (1×1) surface models is calculated. The calculation results show that the optimal ratio of Cs to O for activation is between 31 and 41. Then, Cs/O activation and stability testing experiments on reflection-mode negative electron affinity GaN photocathodes are performed. The surface model [GaN (Mg): Cs] Cs-O after being activated with cesium and oxygen is used. The experiment results illustrate that the adsorption of O contained in the residual gas increases the surface potential barrier and the reduction of the effective dipole quantity is the basic cause of the quantum efficiency decay.