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Main > Chinese Journal of Lasers >  Volume 47 >  Issue 12 >  Page 1202007 > Article
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    • Received: Jun. 11, 2020

    Accepted: --

    Posted: Dec. 1, 2020

    Published Online: Nov. 17, 2020

    The Author Email: Ning He (drnhe@nuaa.edu.cn)

    DOI: 10.3788/CJL202047.1202007

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    Chen Ni, Yan Bo, Li Zhenjun, Li Liang, He Ning. Gaussian Pulsed Laser Etching of CVD Diamonds[J]. Chinese Journal of Lasers, 2020, 47(12): 1202007

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    • laser manufacturing
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Schematic of device for nanosecond laser processing of CVD diamonds

Fig. 1. Schematic of device for nanosecond laser processing of CVD diamonds

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Simulation temperature cloud after single pulse. (a) Horizontal direction; (b) vertical direction

Fig. 2. Simulation temperature cloud after single pulse. (a) Horizontal direction; (b) vertical direction

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Effect of laser power on etching surface pit morphology. (a) 3W; (b) 4W; (c) 5W; (d) 7W

Fig. 3. Effect of laser power on etching surface pit morphology. (a) 3W; (b) 4W; (c) 5W; (d) 7W

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Raman spectra

Fig. 4. Raman spectra

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Morphology of etching pit. (a) Optical morphology; (b) Gaussian fitting of profile

Fig. 5. Morphology of etching pit. (a) Optical morphology; (b) Gaussian fitting of profile

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Effect of scanning speed on pulse spot overlapping during laser line etching. (a) Relatively small scanning speed; (b) relatively large scanning speed

Fig. 6. Effect of scanning speed on pulse spot overlapping during laser line etching. (a) Relatively small scanning speed; (b) relatively large scanning speed

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Laser line etching energy density model

Fig. 7. Laser line etching energy density model

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Line etching widths and side etching depths under different laser scanning speeds. (a) 50mm·s-1; (b) 20mm·s-1; (c) 0.2mm·s-1

Fig. 8. Line etching widths and side etching depths under different laser scanning speeds. (a) 50mm·s-1; (b) 20mm·s-1; (c) 0.2mm·s-1

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Effect of laser power on line etching width. (a) 3W; (b) 7W; (c) 15W

Fig. 9. Effect of laser power on line etching width. (a) 3W; (b) 7W; (c) 15W

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Effect of laser power on side surface line etching depth. (a) 3W; (b) 7W; (c) 15W

Fig. 10. Effect of laser power on side surface line etching depth. (a) 3W; (b) 7W; (c) 15W

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SEM image of laser etched CVD diamond surface. (a) Surface; (b) side surface

Fig. 11. SEM image of laser etched CVD diamond surface. (a) Surface; (b) side surface

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