Main > Chinese Journal of Lasers >  Volume 47 >  Issue 12 >  Page 1202007 > Article
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  • Received: Jun. 11, 2020

    Accepted: --

    Posted: Dec. 1, 2020

    Published Online: Nov. 17, 2020

    The Author Email: Ning He (drnhe@nuaa.edu.cn)

    DOI: 10.3788/CJL202047.1202007

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    Chen Ni, Yan Bo, Li Zhenjun, Li Liang, He Ning. Gaussian Pulsed Laser Etching of CVD Diamonds[J]. Chinese Journal of Lasers, 2020, 47(12): 1202007

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  • laser manufacturing
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  • Table 1. Main parameters of pulsed Ytterbium-doped fiber laser

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    Table 1. Main parameters of pulsed Ytterbium-doped fiber laser

    ParameterPulse duration/nsRepetition rate/kHzBeam qualityfactorWavelength/nmAveragepower /WFocus radius/μm
    Value10020--2001.510642--2020
  • Table 2. Experimental parameters of laser point etching

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    Table 2. Experimental parameters of laser point etching

    No.Number of pulsesPower /W
    1253, 4, 5, 7
    220, 50, 100, 2003
  • Table 3. Experimental parameters of laser line etching

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    Table 3. Experimental parameters of laser line etching

    No.Scanning speed /(mm·s-1)Power /W
    30.2, 20.0, 50.04
    4203, 7, 15
  • Table 4. Gaussian fitting results of etching profiles under different laser powers

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    Table 4. Gaussian fitting results of etching profiles under different laser powers

    Power /WDepth /μmWidth /μmR-square
    3-5.1910.380.97
    4-9.9718.340.99
    5-16.1132.080.98
    7-19.2938.040.97
  • Table 5. Gaussian fitting results of etching profiles under different numbers of pulses

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    Table 5. Gaussian fitting results of etching profiles under different numbers of pulses

    Number of pulsesDepth /μmWidth /μmR-square
    25-5.1910.380.97
    50-8.1115.140.99
    100-10.3422.460.97
    200-15.4031.020.99

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