Main > Infrared and Laser Engineering >  Volume 49 >  Issue 12 >  Page 20201077 > Article
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  • Received: Sep. 5, 2020

    Accepted: --

    Posted: Jan. 14, 2021

    Published Online: Jan. 14, 2021

    The Author Email: Tong Haixia (, Tong Cunzhu (

    DOI: 10.3788/IRLA20201077

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    Haixia Tong, Cunzhu Tong, Ziye Wang, Huanyu Lu, Lijie Wang, Sicong Tian, Lijun Wang. Advances in the technology of 850 nm high-speed vertical cavity surface emitting lasers (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201077

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Infrared and Laser Engineering, Vol. 49, Issue 12, 20201077 (2020)

Advances in the technology of 850 nm high-speed vertical cavity surface emitting lasers (Invited)

Tong Haixia1,2, Tong Cunzhu1, Wang Ziye1,2, Lu Huanyu1,2, Wang Lijie1, Tian Sicong1, and Wang Lijun1

Author Affiliations

  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China


Vertical-cavity surface-emitting lasers (VCSELs) have important applications in the short-distance optical interconnection attributed to their advantages, such as low cost, low threshold current, high modulation bandwidth and low power consumption. With the development of big-data and supercomputer technology, the performance demand of short-distance optical interconnection is increasing quickly, which also proposes a challenge for high-speed 850 nm VCSEL. In this paper, the latest development of high-speed 850 nm VCSEL technology was reviewed from the aspects of bandwidth-limited factors and new modulation methods, and the growing trend of this technology is prospected and summarized.


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