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Accepted: --

Posted: Mar. 12, 2020

Published Online: Mar. 12, 2020

The Author Email: MA Su-Yu (51161213022@stu.ecnu.edu.cn), CHEN Ye (ychen@ee.ecnu.edu.cn), YUE Fang-Yu (fyyue@ee.ecnu.edu.cn)

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Su-Yu MA, Chuan-He MA, Xiao-Shuang LU, Guo-Shuai LI, Lin SUN, Ye CHEN, Fang-Yu YUE, Jun-Hao CHU. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 92

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## Abstract

The bandedge electronic structure including the optical bandgap, band-tail states, and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption, photocurrent and photoluminescence spectroscopy, and the theoretical reports. It is revealed that the $SnZn$-related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure. High concentration of the neutral defect cluster [$2CuZn+SnZn$] can narrow the band gap substantially, while the partially-passivated （ionic） defect cluster [$CuZn+SnZn$] is the main deep donor defect. A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy. These detrimental defects related to $SnZn$ can be effectively suppressed by properly reducing the Sn content in the copper-poor and zinc-rich growth condition, which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.