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  • Received: Sep. 16, 2019

    Accepted: --

    Posted: Mar. 12, 2020

    Published Online: Mar. 12, 2020

    The Author Email: MA Su-Yu (51161213022@stu.ecnu.edu.cn), CHEN Ye (ychen@ee.ecnu.edu.cn), YUE Fang-Yu (fyyue@ee.ecnu.edu.cn)

    DOI: 10.11972/j.issn.1001-9014.2020.01.013

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    Su-Yu MA, Chuan-He MA, Xiao-Shuang LU, Guo-Shuai LI, Lin SUN, Ye CHEN, Fang-Yu YUE, Jun-Hao CHU. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 92

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Journal of Infrared and Millimeter Waves, Vol. 39, Issue 1, 92 (2020)

Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4

MA Su-Yu1, MA Chuan-He1, LU Xiao-Shuang1, LI Guo-Shuai1, SUN Lin1, CHEN Ye1,*, YUE Fang-Yu1,*, and CHU Jun-Hao1,2

Author Affiliations

  • 1Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
  • 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai00083, China

Abstract

The bandedge electronic structure including the optical bandgap, band-tail states, and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption, photocurrent and photoluminescence spectroscopy, and the theoretical reports. It is revealed that the SnZn-related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure. High concentration of the neutral defect cluster [2CuZn+SnZn] can narrow the band gap substantially, while the partially-passivated (ionic) defect cluster [CuZn+SnZn] is the main deep donor defect. A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy. These detrimental defects related to SnZn can be effectively suppressed by properly reducing the Sn content in the copper-poor and zinc-rich growth condition, which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.

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