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  • Received: Jul. 7, 2020

    Accepted: Aug. 28, 2020

    Posted: Nov. 20, 2020

    Published Online: Dec. 7, 2020

    The Author Email: Yanqi Liu (, Yuxin Leng (

    DOI: 10.3788/COL202119.011401

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    Keyang Liu, Yanqi Liu, Yunhai Tang, Junchi Chen, Cheng Wang, Xingyan Liu, Yingbin Long, Yi Xu, Yujie Peng, Xiaoming Lu, Zhengzheng Liu, Yuxin Leng. Demonstration of joule-level chirped pulse amplification based on tiled Ti:sapphire amplifier[J]. Chinese Optics Letters, 2021, 19(1): 011401

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Chinese Optics Letters, Vol. 19, Issue 1, 011401 (2021)

Demonstration of joule-level chirped pulse amplification based on tiled Ti:sapphire amplifier

Keyang Liu1,2,3, Yanqi Liu1,*, Yunhai Tang1, Junchi Chen1, Cheng Wang1, Xingyan Liu1,2,3, Yingbin Long1, Yi Xu1, Yujie Peng1, Xiaoming Lu1, and Zhengzheng Liu1, Yuxin Leng1,2,4,**

Author Affiliations

  • 1State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
  • 4CAS Center for Excellence in Ultra-intense Laser Science, Shanghai 201800, China


A novel tiled Ti:sapphire (Ti:S) amplifier was experimentally demonstrated with >1 J amplified chirped pulse output. Two Ti:S crystals having dimensions of 14 mm× 14 mm× 25 mm were tiled as the gain medium in a four-pass amplifier. Maximum output energy of 1.18 J was obtained with 2.75 J pump energy. The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier. The laser pulse having the maximum peak power of 28 TW was obtained after the compressor. Moreover, the influence of the beam gap on the far field was discussed. This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.


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