Chinese Optics Letters, Vol. 18, Issue 11, 112501 (2020)
Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphene
Chunhong Zeng1,2, Wenkui Lin2, Tao He2,3, Yukun Zhao2, Yuhua Sun2, Qi Cui2, Xuan Zhang2, Shulong Lu2, Xuemin Zhang2, Yameng Xu1, Mei Kong1,*, and Baoshun Zhang2,**
- 1School of Science, Changchun University of Science and Technology, Changchun 130022, China
- 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- 3School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
A monolithic integrated ultraviolet-infrared (UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene. The device detects UV and IR lights by different mechanisms. The UV detection is accomplished by the forbidden band absorption of GaN, and the IR detection is realized by the free electron absorption of graphene. At peak wavelengths of 360 nm and 1540 nm, the detector has responsivities up to 6.93 A/W and 0.11 A/W, detection efficiencies of 1.23 × 1012 cm·Hz1/2 ·W-1 and 1.88 × 1010 cm·Hz1/2 ·W-1, respectively, and a short response time of less than 3 ms.
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