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Main > Advanced Photonics >  Volume 1 >  Issue 3 >  Page 036001 > Article

Fig. 1. (a) Scheme showing the creation of a DH-PSF by using a phase mask with the phase profile shown in (b). (c) Intensity distribution in the image plane of the lens for different distances between the point light source and the phase mask.

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Fig. 2. Phase profiles for realizing a DH-PSF with (a) 4 and (b) 10 evenly spaced phase steps. (c) Intensity profile of ideal DH-PSF, where the main parameters are indicated. (d)–(g) Comparison of parameters of ideal and discretized PSFs dependent on the distance D between the point light source and the phase mask. The plots show the difference between the values for ideal and discretized realizations for (d) the rotation angle Θ, (e) the distance L, (f) the horizontal width Δx, and (g) the vertical width Δy.

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Fig. 3. (a) Sketch of the considered geometry of the metasurface consisting of silicon nanodisks embedded in a medium with a refractive index of n=1.45. Numerical calculations of (b) the transmittance intensity and (c) phase of silicon nanodisk arrays with varying radius and lattice periodicity. The operation wavelength is 1500 nm. (d), (e) Transmission phase of metasurfaces with parameters along the white dashed lines in (b) and (c).

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Fig. 4. (a) SEM image of realized silicon metasurface before covering with spin-on-glass. The scale bar is 2  μm. (b) Photograph of the finished sample with the 16 fabricated phase masks of 1-cm diameter. (c) Measured phase profile in the center of a phase mask with 10 phase levels.

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Fig. 5. (a) Measured DH-PSF. (b) Rotation angle of the DH-PSF in dependence on the source-sample distance D, the insets show two specific orientations of the DH-PSF. (c) Photograph of a 3-D scene. (d) Raw image that was taken using the phase mask and (e) retrieved depth information.

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