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  • Received: Mar. 5, 2020

    Accepted: Jun. 2, 2020

    Posted: Jun. 3, 2020

    Published Online: Jun. 30, 2020

    The Author Email: Xiaojuan Sun (, Dabing Li (

    DOI: 10.1364/PRJ.392041

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    Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Jianwei Ben, Jiamang Che, Zhiming Shi, Yuping Jia, Yang Chen, Shanli Zhang, Wei Lv, Dabing Li. Polarization-enhanced AlGaN solar-blind ultraviolet detectors[J]. Photonics Research, 2020, 8(7): 07001243

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Photonics Research, Vol. 8, Issue 7, 07001243 (2020)

Polarization-enhanced AlGaN solar-blind ultraviolet detectors

Ke Jiang1,2, Xiaojuan Sun1,2,6,*, Zi-Hui Zhang1,3, Jianwei Ben1,2,5, Jiamang Che3, Zhiming Shi1,2, Yuping Jia1,2, Yang Chen1,2, Shanli Zhang1,2, Wei Lv1,4, and Dabing Li1,2,7,*

Author Affiliations

  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
  • 4Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012, China
  • 5Current Address: College of Materials Science and Engineering, Shenzhen University, Shenzhen 518071, China
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AlGaN solar-blind ultraviolet detectors have great potential in many fields, although their performance has not fully meet the requirements until now. Here, we proposed an approach to utilize the inherent polarization effect of AlGaN to improve the detector performance. AlGaN heterostructures were designed to enhance the polarization field in the absorption layer, and a high built-in field and a high electron mobility conduction channel were formed. As a result, a high-performance solar-blind ultraviolet detector with a peak responsivity of 1.42 A/W at 10 V was achieved, being 50 times higher than that of the nonpolarization-enhanced one. Moreover, an electron reservoir structure was proposed to further improve the performance. A higher peak responsivity of 3.1 A/W at 30 V was achieved because the electron reservoir structure could modulate the electron concentration in the conduction channel. The investigation presented here provided feasible approaches to improve the performance of the AlGaN detector by taking advantage of its inherent property.

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