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  • Received: May. 8, 2020

    Accepted: Jun. 30, 2020

    Posted: Jul. 7, 2020

    Published Online: Aug. 7, 2020

    The Author Email: Zeyu Zhang (z_zhang@ucsb.edu)

    DOI: 10.1364/PRJ.397175

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    Zeyu Zhang, Justin C. Norman, Songtao Liu, Aditya Malik, John E. Bowers. Integrated dispersion compensated mode-locked quantum dot laser[J]. Photonics Research, 2020, 8(9): 09001428

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Photonics Research, Vol. 8, Issue 9, 09001428 (2020)

Integrated dispersion compensated mode-locked quantum dot laser

Zeyu Zhang1,2,*, Justin C. Norman2, Songtao Liu3, Aditya Malik1, and John E. Bowers1,2,3

Author Affiliations

  • 1Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
  • 2Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
  • 3Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA

Abstract

Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.

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