Chinese Optics Letters, Vol. 18, Issue 10, 101401 (2020)
High single-pulse energy passively Q-switched laser based on Yb,Gd:SrF2 crystal
Mengfei Zhao1, Cong Wang1, Qianqian Hao1, Zhengting Zou2,3, Jie Liu1,*, Xiuwei Fan1,**, and Liangbi Su2,3
- 1Shandong Provincial Engineering and Technical Center of Light Manipulations & Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
- 2CAS Key Laboratory of Transparent and Opto-functional Inorganic Materials, Synthetic Single Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
- 3State Ley Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
We report on laser diode (LD) pumped passively Q-switched Yb,Gd:SrF2 lasers with high single-pulse energy for the first time, to the best of our knowledge. In addition, a stable Q-switched laser based on a Cr4+:Y3Al5O12 saturable absorber was demonstrated. The maximum output power of the Q-switched laser obtained was 495 mW, with a pulse width and a pulse repetition rate of 233 ns and 1.238 kHz, respectively. The corresponding single-pulse energy and the peak power were as high as 400 μJ and 1.714 kW. The laser was operated under a transverse electromagnetic mode, and the beam quality was near-diffraction-limited.
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