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  • Received: Jan. 21, 2019

    Accepted: Mar. 14, 2019

    Posted: Jun. 12, 2019

    Published Online: Jun. 12, 2019

    The Author Email: Wenbin Liu (liuwenbin@raybowlaser.com)

    DOI: 10.3788/COL201917.061403

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    H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu. 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser[J]. Chinese Optics Letters, 2019, 17(6): 061403

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Chinese Optics Letters, Vol. 17, Issue 6, 061403 (2019)

12 W high power InGaAsP/AlGaInP 755 nm quantum well laser

H. Martin Hu1,2, Jianyang Zhao3, Weimin Wang3, James Ho1,2, Langxing Kuang3, and Wenbin Liu3,*

Author Affiliations

  • 1Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
  • 2Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China
  • 3Shenzhen Raybow Optoelectronics Co., Ltd., Shenzhen 518055, China

Abstract

High power laser diodes (LDs) with a lasing wavelength between 700 and 780 nm have great potential in various medical uses. Here, we report our recent efforts in developing an InGaAsP/AlGaInP-based commercial high power edge-emitting LD, which has 755 nm emission peak with a world-record continuous wave output power of 12.7 W, the highest reported so far. The lack of Al atoms in the active region significantly lowers the chance of catastrophic optical damage during high power laser operation. Meanwhile, with an accumulated 3800 h running time, our ongoing aging tests reveal excellent reliability of our devices.

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