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  • Received: Jan. 13, 2020

    Accepted: Feb. 27, 2020

    Posted: Feb. 28, 2020

    Published Online: Apr. 22, 2020

    The Author Email: Daoxin Dai (dxdai@zju.edu.cn)

    DOI: 10.1364/PRJ.387816

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    Long Zhang, Lanlan Jie, Ming Zhang, Yi Wang, Yiwei Xie, Yaocheng Shi, Daoxin Dai. Ultrahigh-Q silicon racetrack resonators[J]. Photonics Research, 2020, 8(5): 05000684

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  • Table 1. Comparison of Ultrahigh-Q Silicon Photonic Resonatorsa

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    Table 1. Comparison of Ultrahigh-Q Silicon Photonic Resonatorsa

    Ref.TypeWaveguideFabricationReff(μm)FSR (nm)Cross sectionQloadQintrinsicLoss (dB/cm)
    [18]All-passRidgeReflowing & oxidation24500.043wr=2.05  μmhr=0.22  μmhs=1.00  μm2.0×1072.2×1070.0027
    [15]All-passRidgeDouble-etching60000.017wr=3.0  μmhr=0.13  μmhs=0.09  μm1.7×106/0.085 (straight part)
    [16]Add-dropRidgeDouble-etching20+400.208wr=2.00  μmhr=0.13  μmhs=0.09  μm1.1×1063.2×1060.21
    [3]Add-dropRidgeDouble-etching20+500.325wr=2.00  μmhr=0.13  μmhs=0.09  μm1.1×1062.7×1060.25
    [17]All-passStripSingle-etching4500.160wr=3.00  μmhr=0.22  μm1.3×1062.2×1060.3
    This workAll-passStripSingle-etching290.900wr=1.60  μmhr=0.22  μm1.3×1062.3×1060.3

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