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  • Received: Aug. 20, 2020

    Accepted: Sep. 24, 2020

    Posted: Dec. 1, 2020

    Published Online: Dec. 3, 2020

    The Author Email: Xiao Qingquan (qqxiao@gzu.edu.cn)

    DOI: 10.3788/AOS202040.2416001

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    Aoshuang Wang, Qingquan Xiao, Hao Chen, Quan Xie. Simulation on GaN/Si Single Heterojunction Solar Cells[J]. Acta Optica Sinica, 2020, 40(24): 2416001

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Acta Optica Sinica, Vol. 40, Issue 24, 2416001 (2020)

Simulation on GaN/Si Single Heterojunction Solar Cells

Wang Aoshuang, Xiao Qingquan*, Chen Hao, and Xie Quan

Author Affiliations

  • Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang, Guizhou 550025, China

Abstract

The wxAMPS software is used to simulate the GaN/Si single heterojunction solar cells, and the effects of doping concentration, thickness, and temperature of each layer on the battery open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (F) and conversion efficiency are investigated. The simulation results show that as the acceptor concentration in the Si layer increases, JSC decreases, but all of VOC, F, and conversion efficiency increase. When the doping concentration of GaN is 5×10 18 cm -3 and the doping concentration of Si is 5×10 19 cm -3, the conversion efficiency of the ultra-thin cell with a Si layer of 16 μm thickness can reach 16.91%. As the thickness of the Si layer increases, all of VOC, JSC, F, and conversion efficiency increase. When the thickness of the GaN layer is 0.005 μm and the thickness of the Si layer is 100 μm, the efficiency can reach 24.58%. The simulation results show that when the thickness of the GaN/Si single heterojunction solar cell is 60% of the thickness of the current most efficient silicon-based solar cell, the efficiency of the former can reach 92% that of the latter. The research results are helpful to fabricate high-efficiency GaN/Si single heterojunction solar cells.

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