Main > Chinese Optics Letters >  Volume 17 >  Issue 2 >  Page 020002 > Article
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Accepted: Nov. 29, 2018

Posted: Feb. 14, 2019

Published Online: Feb. 14, 2019

The Author Email: Yongzhe Zhang (yzzhang@bjut.edu.cn)

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Beiyun Liu, Congya You, Chen Zhao, Gaoliang Shen, Yawei Liu, Yufo Li, Hui Yan, Yongzhe Zhang. High responsivity and near-infrared photodetector based on graphene/MoSe2 heterostructure[J]. Chinese Optics Letters, 2019, 17(2): 020002

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## Abstract

Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/$MoSe2$ heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to $1.3×104 A·W 1$ at 550 nm. The electron–hole pairs are excited in a few-layered $MoSe2$ and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the $MoSe2$, which creates a photogating effect.