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Chinese Optics Letters, Vol. 17, Issue 2, pp.020002 (2019)

High responsivity and near-infrared photodetector based on graphene/MoSe2 heterostructure

Beiyun Liu1, Congya You1, Chen Zhao1, Gaoliang Shen1, Yawei Liu1, Yufo Li1, Hui Yan1, and Yongzhe Zhang1,*

Author Affiliations

  • 1Key Laboratory for Advanced Functional Materials of the Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100024, China

Abstract

Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe2 heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3×104A·W1 at 550 nm. The electron–hole pairs are excited in a few-layered MoSe2 and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe2, which creates a photogating effect.