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  • Received: Dec. 31, 2019

    Accepted: Mar. 25, 2020

    Posted: May. 22, 2020

    Published Online: May. 25, 2020

    The Author Email: Zunren Lü (lvzunren@semi.ac.cn), Tao Yang (tyang@semi.ac.cn)

    DOI: 10.3788/COL202018.071401

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    Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang. 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C[J]. Chinese Optics Letters, 2020, 18(7): 071401

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Chinese Optics Letters, Vol. 18, Issue 7, 071401 (2020)

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang1,2, Zunren Lü1,2,*, Xiaoguang Yang1,2, Hongyu Chai1,2, Lei Meng1,2, and Tao Yang1,2,**

Author Affiliations

  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot (QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped InAs QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 mA at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 dB bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.

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