Chinese Optics Letters, Vol. 18, Issue 7, 071401 (2020)
25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C
Zhongkai Zhang1,2, Zunren Lü1,2,*, Xiaoguang Yang1,2, Hongyu Chai1,2, Lei Meng1,2, and Tao Yang1,2,**
- 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot (QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped InAs QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 mA at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 dB bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.
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