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  • Received: Mar. 8, 2017

    Accepted: --

    Posted: Jul. 1, 2017

    Published Online: Jul. 5, 2017

    The Author Email: Shuang Xie (shuang_xie@zju.edu.cn), Mingsheng Xu (msxu@zju.edu.cn)

    DOI: 10.3788/cjl201744.0703001

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    Xie Shuang, Liang Tao, Ma Xiangyang, Xu Mingsheng. Preparation, Properties and Optoelectronic Applications of Transition Metal Dichalcogenides[J]. Chinese Journal of Lasers, 2017, 44(7): 703001

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Chinese Journal of Lasers, Vol. 44, Issue 7, 703001 (2017)

Preparation, Properties and Optoelectronic Applications of Transition Metal Dichalcogenides

Shuang Xie1,2,*, Tao Liang1,3, Xiangyang Ma1,2, and Mingsheng Xu1,4

Author Affiliations

  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]

Abstract

Due to their atomic-level thickness and unique optoelectronic properties, the transition metal dichalcogenides (TMDs) have been received widespread attention and research. The controllable preparation, novel optoelectronic properties and optoelectronic applications in many fields, such as photodetection, light emission, spin and energy valley electronics of TMD, have been reported widely. From the three perspectives of material preparation, optoelectronic properties and applications of TMD, these works are reviewed.

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