Chinese Optics Letters, Vol. 2, Issue 9, 09536 (2004)
Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser
Xinning Tian1, Ping Yan1,*, Qiang Liu1, Mali Gong1, and Yun Liao2
- 1Center for Photonics and Electronics, Department of Precision Instruments, Tsinghua University, Beijing 100084
- 2University of Electronic Science and Technology of China, Chengdu 610054
A pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum (FWHM) is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd:YAG/Cr:YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26% (1δ) through the pre-pumped modulation technique.
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