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  • Received: Nov. 13, 2019

    Accepted: Dec. 19, 2019

    Posted: Apr. 3, 2020

    Published Online: Apr. 7, 2020

    The Author Email: Jie Liu (jieliu@sdnu.edu.cn)

    DOI: 10.3788/COL202018.041401

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    Mengfei Zhao, Zhongmian Zhang, Xiaoyue Feng, Mengyu Zong, Jie Liu, Xiaodong Xu, Han Zhang. High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx[J]. Chinese Optics Letters, 2020, 18(4): 041401

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Chinese Optics Letters, Vol. 18, Issue 4, 041401 (2020)

High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx

Mengfei Zhao1, Zhongmian Zhang1, Xiaoyue Feng1, Mengyu Zong1, Jie Liu1,*, Xiaodong Xu2, and Han Zhang3

Author Affiliations

  • 1Shandong Provincial Engineering and Technical Center of Light Manipulations & Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
  • 2Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
  • 3Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology and College of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China

Abstract

A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was demonstrated for the first time, to the best of our knowledge. Based on an MXene Ti3C2Tx sheet, a high repetition rate of 201 kHz and a Q-switched pulse width of 346 ns were obtained when the absorbed pump power was 2.8 W. The peak power and single pulse energy were 1.87 W and 0.65 μJ, respectively.

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