Chinese Optics Letters, Vol. 18, Issue 4, 041401 (2020)
High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx
Mengfei Zhao1, Zhongmian Zhang1, Xiaoyue Feng1, Mengyu Zong1, Jie Liu1,*, Xiaodong Xu2, and Han Zhang3
- 1Shandong Provincial Engineering and Technical Center of Light Manipulations & Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
- 2Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
- 3Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology and College of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China
A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was demonstrated for the first time, to the best of our knowledge. Based on an MXene Ti3C2Tx sheet, a high repetition rate of 201 kHz and a Q-switched pulse width of 346 ns were obtained when the absorbed pump power was 2.8 W. The peak power and single pulse energy were 1.87 W and 0.65 μJ, respectively.
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