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  • Received: Nov. 13, 2019

    Accepted: Dec. 19, 2019

    Posted: Apr. 3, 2020

    Published Online: Apr. 7, 2020

    The Author Email: Jie Liu (

    DOI: 10.3788/COL202018.041401

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    Mengfei Zhao, Zhongmian Zhang, Xiaoyue Feng, Mengyu Zong, Jie Liu, Xiaodong Xu, Han Zhang. High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx[J]. Chinese Optics Letters, 2020, 18(4): 041401

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Chinese Optics Letters, Vol. 18, Issue 4, 041401 (2020)

High repetition rate passively Q-switched laser on Nd:SRA at 1049 nm with MXene Ti3C2Tx

Mengfei Zhao1, Zhongmian Zhang1, Xiaoyue Feng1, Mengyu Zong1, Jie Liu1,*, Xiaodong Xu2, and Han Zhang3

Author Affiliations

  • 1Shandong Provincial Engineering and Technical Center of Light Manipulations & Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
  • 2Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
  • 3Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology and College of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China


A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. A diode-pumped Nd:SRA Q-switched laser operating at 1049 nm was demonstrated for the first time, to the best of our knowledge. Based on an MXene Ti3C2Tx sheet, a high repetition rate of 201 kHz and a Q-switched pulse width of 346 ns were obtained when the absorbed pump power was 2.8 W. The peak power and single pulse energy were 1.87 W and 0.65 μJ, respectively.


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