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  • Received: May. 25, 2020

    Accepted: Aug. 19, 2020

    Posted: Aug. 20, 2020

    Published Online: Oct. 10, 2020

    The Author Email: Zhen Deng (zhen.deng@iphy.ac.cn)

    DOI: 10.1364/PRJ.398450

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    Xinxin Li, Zhen Deng, Jun Li, Yangfeng Li, Linbao Guo, Yang Jiang, Ziguang Ma, Lu Wang, Chunhua Du, Ying Wang, Qingbo Meng, Haiqiang Jia, Wenxin Wang, Wuming Liu, Hong Chen. Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current[J]. Photonics Research, 2020, 8(11): 11001662

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Photonics Research, Vol. 8, Issue 11, 11001662 (2020)

Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

Xinxin Li1,2,3, Zhen Deng1,3,4,*, Jun Li1,3, Yangfeng Li1,3, Linbao Guo1,2,3, Yang Jiang1,3, Ziguang Ma1,3, Lu Wang1,3, Chunhua Du1,3,4, Ying Wang5, Qingbo Meng1,3, Haiqiang Jia1,3,6, Wenxin Wang1,3,6, Wuming Liu1, and Hong Chen1,3,6,7

Author Affiliations

  • 1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4The Yangtze River Delta Physics Research Center, Liyang 213000, China
  • 5Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, China
  • 6Songshan Lake Materials Laboratory, Dongguan 523808, China
  • 7e-mail: hchen@iphy.ac.cn

Abstract

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10-7 A/cm2 at -1 V and a high rectification ratio of 1.5×108 at ±1 V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.

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