Main > Photonics Research >  Volume 8 >  Issue 11 >  Page 11001662 > Article
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• Received: May. 25, 2020

Accepted: Aug. 19, 2020

Posted: Aug. 20, 2020

Published Online: Oct. 10, 2020

The Author Email: Zhen Deng (zhen.deng@iphy.ac.cn)

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Xinxin Li, Zhen Deng, Jun Li, Yangfeng Li, Linbao Guo, Yang Jiang, Ziguang Ma, Lu Wang, Chunhua Du, Ying Wang, Qingbo Meng, Haiqiang Jia, Wenxin Wang, Wuming Liu, Hong Chen. Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current[J]. Photonics Research, 2020, 8(11): 11001662

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## Abstract

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of $3.7×10-7 A/cm2$ at $-1 V$ and a high rectification ratio of $1.5×108$ at $±1 V$. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.