Chinese Optics Letters, Vol. 17, Issue 7, 071403 (2019)
Soliton mode-locked fiber laser with high-quality MBE-grown Bi2Se3 film
Runlin Miao1, Mingyu Tong1, Ke Yin2,3, Hao Ouyang1, Zhenyu Wang2, Xin Zheng2, Xiang’ai Cheng1, and Tian Jiang1,*
- 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- 2National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100071, China
- 3State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
In this work, a soliton mode-locked erbium-doped fiber laser (EDFL) with a high-quality molecular beam epitaxy (MBE)-grown topological insulator (TI) Bi2Se3 saturable absorber (SA) is reported. To fabricate the SA device, a 16-layer Bi2Se3 film was grown successfully on a 100 μm thick SiO2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm2. After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy, pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 pJ, 1.08 ps, and 60 dBm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.
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