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  • Received: Jul. 31, 2019

    Accepted: Nov. 20, 2019

    Posted: Nov. 22, 2019

    Published Online: Jan. 16, 2020

    The Author Email: Xiaocong Yuan (xcyuan@szu.edu.cn)

    DOI: 10.1364/PRJ.8.000121

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    Zhenwei Xie, Ting Lei, Haodong Qiu, Zecen Zhang, Hong Wang, Xiaocong Yuan. Broadband on-chip photonic spin Hall element via inverse design[J]. Photonics Research, 2020, 8(2): 02000121

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Photonics Research, Vol. 8, Issue 2, 02000121 (2020)

Broadband on-chip photonic spin Hall element via inverse design 

Zhenwei Xie1,2,3,†, Ting Lei1,4,†, Haodong Qiu2, Zecen Zhang2, Hong Wang2, and Xiaocong Yuan1,*

Author Affiliations

  • 1Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-scale Optical Information Technology, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 3e-mail: ayst3_1415926@sina.com
  • 4e-mail: leiting@szu.edu.cn

Abstract

The photonic spin Hall effect plays an important role in photonic information technologies, especially in on-chip spin Hall devices. However, conventional devices suffer from low efficiency or narrow bandwidth, which prevents their practical application. Here, we introduce a spin Hall device using inverse design to achieve both high efficiency and broadband. Spin-dependent light separation is enabled by a 2.4 μm circular device with 100 nm pixels. The photonic spin Hall element is fabricated on a silicon-on-insulator wafer compatible with a standard integrated photonic circuit. The spin light is detected and emitted with an efficiency of up to 22% and 35%, respectively, over a 200 nm bandwidth at optical wavelength.

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