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  • Received: Apr. 4, 2019

    Accepted: Jun. 14, 2019

    Posted: Sep. 6, 2019

    Published Online: Sep. 6, 2019

    The Author Email: Dan Lu (ludan@semi.ac.cn)

    DOI: 10.3788/COL201917.111402

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    Huan Wang, Lu Guo, Wu Zhao, Guangcan Chen, Dan Lu, Lingjuan Zhao. 4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner[J]. Chinese Optics Letters, 2019, 17(11): 111402

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Chinese Optics Letters, Vol. 17, Issue 11, 111402 (2019)

4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Huan Wang1,2,3, Lu Guo1,2,3, Wu Zhao1,2,3, Guangcan Chen1,2,3, Dan Lu1,2,3,*, and Lingjuan Zhao1,2,3

Author Affiliations

  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

Abstract

We report a distributed-Bragg-reflectors-based 4 × 40 GHz mode-locked laser diode (MLLD) array monolithically integrated with a multimode interference (MMI) combiner. The laser produces 2.98 ps pulses with a time-bandwidth product of 0.39. The peak wavelength of the MLLD array can be tuned by 8.4 nm while maintaining a good mode-locked state. The four mode-locked channels could work simultaneously with the peak wavelength interval around 3 nm.