Chinese Optics Letters, Vol. 17, Issue 11, 111402 (2019)
4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner
Huan Wang1,2,3, Lu Guo1,2,3, Wu Zhao1,2,3, Guangcan Chen1,2,3, Dan Lu1,2,3,*, and Lingjuan Zhao1,2,3
- 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
We report a distributed-Bragg-reflectors-based 4 × 40 GHz mode-locked laser diode (MLLD) array monolithically integrated with a multimode interference (MMI) combiner. The laser produces 2.98 ps pulses with a time-bandwidth product of 0.39. The peak wavelength of the MLLD array can be tuned by 8.4 nm while maintaining a good mode-locked state. The four mode-locked channels could work simultaneously with the peak wavelength interval around 3 nm.
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