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  • Received: Dec. 20, 2019

    Accepted: --

    Posted: Nov. 20, 2020

    Published Online: Nov. 20, 2020

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    DOI: 10.7498/aps.69.20191931

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    Nai-Zhang Liu, Xue-Bing Zhang, Ruo-He Yao. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances[J]. Acta Physica Sinica, 2020, 69(7): 077302-1

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Acta Physica Sinica, Vol. 69, Issue 7, 077302-1 (2020)

The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances

Liu Nai-Zhang, Zhang Xue-Bing, and Yao Ruo-He*

Author Affiliations

  • School of Electronics and Information Technology, South China University of Technology, Guangzhou 510640, China


With the development of the application of AlGaN/GaN high electron mobility transistors in the radio frequency field, a capacitance model that can accurately describe the C-V characteristics of the device has become an important research topic. The gate capacitance of GaN HEMT can be divided into two parts: intrinsic capacitance and fringing capacitance related to two-dimensional electronic gas (2DEG) electrode. The fringing capacitance plays an important part in the switching device. The outer fringing capacitance Cofs/d dominates the fringing capacitance and is affected by the bias applied, especially the drain outer fringing capacitance Cofd. In order to establish the Cofd model which is related to the bias condition, the physics-based model of Cofd is established based on the conformal mapping, including the drain channel length variable. Since the drain channel length is related to the bias applied, the channel length modulation effect can be used to study how bias apllied effect the channel, and the relationship between Cofd and the bias condition is obtained. In addition, the threshold voltage variable is introduced when the channel length modulation effect is considered, and the threshold voltage drift caused by changes in the internal parameters and temperature of the device is studied using the threshold voltage variable in the model, and the relationship between Cofd and threshold voltage and temperature under different bias was obtained. It is found from the results of the study that as drain bias increases from zero, the channel length modulation effect keeps Cofd unchanged at lower drain bias. When the drain bias continues to increase, Cofd begins to decay again, and its decay rate slows down with the increase of gate bias. The decrease of donor impurity concentration and Al component in AlGaN barrier layer may increase the threshold voltage, which will strengthen the channel length modulation effect on Cofd, resulting in linear attenuation of Cofd. With the increasing of drain bias, the influence of threshold voltage shift on Cofd is enhanced, and the change of device operating temperature will enhance the threshold voltage shift and cause the deviation of Cofd. Moreover, with the continuous increase of drain bias, Cofd becomes more sensitive to the temperature variation.


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