Laser & Optoelectronics Progress, Vol. 57, Issue 7, 072301 (2020)
Optimization and Preparation of GaN-Based LED Chip Electrode Structure
Chao Pengfei1, Xu Yingchao2,3,*, Liu Chunhui2, Wu Tianyu1, Li Yangyang1, and Liu Jianning1
- 1School of Electrical Engineering and Automation, Xiamen University of Technology, Xiamen, Fujian 361024, China
- 2School of Optoelectronics and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
- 3Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, Fujian 361024, China
ing at the problem of uneven current distribution in GaN-based LED chip, the traditional electrode structure is optimized. By establishing a three-dimensional simulation model based on finite element analysis software COMSOL, the current distribution in the active layer of chip electrode with optimized structure and traditional structure is simulated respectively. The results show that the current distribution in the chip with optimized structure is more uniform. Then, LED chips of various structures are prepared and tested for photoelectric performance. Experimental results show that changing the shape of the N electrode to a fan-shaped structure can improve the light output efficiency of the LED. When the input current is 20 mA, the output light power of the LED chip is 31.84 mW, and the light extraction efficiency is 52.03%, which is 6.14% higher than that of the conventional LED chip.
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