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  • Received: Jul. 24, 2019

    Accepted: Jul. 31, 2019

    Posted: Sep. 9, 2019

    Published Online: Sep. 9, 2019

    The Author Email: Xinke Liu (, Dabing Li (

    DOI: 10.1364/PRJ.7.001127

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    You Wu, Zhiwen Li, Kah-Wee Ang, Yuping Jia, Zhiming Shi, Zhi Huang, Wenjie Yu, Xiaojuan Sun, Xinke Liu, Dabing Li. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors[J]. Photonics Research, 2019, 7(10): 10001127

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Photonics Research, Vol. 7, Issue 10, 10001127 (2019)

Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 

You Wu1,2, Zhiwen Li1,2, Kah-Wee Ang3, Yuping Jia1,2, Zhiming Shi1,2, Zhi Huang4, Wenjie Yu5, Xiaojuan Sun1,2, Xinke Liu1,2,6,*, and Dabing Li1,2,7,*

Author Affiliations

  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
  • 4Shenzhen Castle Security Technology Co., Ltd., Shenzhen 518000, China
  • 5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 6e-mail:
  • 7e-mail:


With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual- or multi-wavelength detectors, while integration of both visible light and ultraviolet (UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.