Main > Photonics Research >  Volume 6 >  Issue 3 >  Page 03000220 > Article
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• Received: Nov. 20, 2017

Accepted: Jan. 18, 2018

Posted: Jan. 23, 2018

Published Online: Jul. 10, 2018

The Author Email: Zhiyi Wei (zywei@iphy.ac.cn)

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Wenjun Liu, Ya-Nan Zhu, Mengli Liu, Bo Wen, Shaobo Fang, Hao Teng, Ming Lei, Li-Min Liu, Zhiyi Wei. Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials[J]. Photonics Research, 2018, 6(3): 03000220

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## Abstract

Two-dimensional (2D) materials with potential applications in photonic and optoelectronic devices have attracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials’ optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are synthesized with van der Waals heterostructures consisting of $MoS2$ and $Sb2Te3$. The bandgap, carrier mobility, and carrier concentration of the $MoS2-Sb2Te3-MoS2$ heterostructure materials are calculated theoretically. By using these materials as saturable absorbers (SAs), applications in fiber lasers with $Q$-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17% and $14.13 J/cm2$, respectively. Both theoretical and experimental results indicate that $MoS2-Sb2Te3-MoS2$ heterostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The $MoS2-Sb2Te3-MoS2$ heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.