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  • Received: Sep. 10, 2018

    Accepted: Nov. 10, 2018

    Posted: May. 7, 2019

    Published Online: May. 7, 2019

    The Author Email: Fengyi Jiang (jiangfengyi@ncu.ed.cn)

    DOI: 10.1364/PRJ.7.000144

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    Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 02000144

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Photonics Research, Vol. 7, Issue 2, 02000144 (2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang1,*, Jianli Zhang1,2, Longquan Xu1,2, Jie Ding1,2, Guangxu Wang1,2, Xiaoming Wu1,2, Xiaolan Wang1,2, Chunlan Mo1,2, Zhijue Quan1,2, Xing Guo1,2, Changda Zheng1,2, Shuan Pan1,2, and Junlin Liu1,2,3

Author Affiliations

  • 1National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
  • 2Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China
  • 3e-mail: liujunlin@ncu.edu.cn

Abstract

Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A/cm2 and 33.7% at 3 A/cm2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.

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