Main > Photonics Research >  Volume 7 >  Issue 2 >  Page 02000144 > Article
  • Abstract
  • Abstract
  • Figures (8)
  • Tables (0)
  • Equations (0)
  • References (19)
  • Get PDF
  • View Full Text
  • Paper Information
  • Received: Sep. 10, 2018

    Accepted: Nov. 10, 2018

    Posted: May. 7, 2019

    Published Online: May. 7, 2019

    The Author Email: Fengyi Jiang (

    DOI: 10.1364/PRJ.7.000144

  • Get Citation
  • Copy Citation Text

    Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 02000144

    Download Citation

  • Category
  • Optoelectronics
  • Share
Photonics Research, Vol. 7, Issue 2, 02000144 (2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang1,*, Jianli Zhang1,2, Longquan Xu1,2, Jie Ding1,2, Guangxu Wang1,2, Xiaoming Wu1,2, Xiaolan Wang1,2, Chunlan Mo1,2, Zhijue Quan1,2, Xing Guo1,2, Changda Zheng1,2, Shuan Pan1,2, and Junlin Liu1,2,3

Author Affiliations

  • 1National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
  • 2Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China
  • 3e-mail:


Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A/cm2 and 33.7% at 3 A/cm2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.

Please Enter Your Email: