Chinese Optics Letters, Vol. 17, Issue 2, 020010 (2019)
Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices
Jimin Shang1, Shuai Zhang2, Yongqiang Wang1, Hongyu Wen3,*, and Zhongming Wei3
- 1School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou 453002, China
- 2College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
- 3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
The electronic and optical properties of the ZrS2/SnS2 van der Waals heterostructure have been investigated. We find out that the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in the heterostructure can be enhanced to the amount of 106 in the ultraviolet light region. In addition, the tuning electronic properties of ZrS2/SnS2 heterostructure are very interesting, due to the transitions from type-I to type-II band alignment that can occur by applying an external electric field. These results suggest that the atomically thin materials ZrS2/SnS2 heterostructure will be utilized for flexible optoelectronic applications.
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