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  • Received: Dec. 27, 2006

    Accepted: --

    Posted: Jun. 27, 2007

    Published Online: Jun. 27, 2007

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer[J]. Chinese Optics Letters, 2007, 5(5): 308

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Chinese Optics Letters, Vol. 5, Issue 5, 308 (2007)

Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer

[in Chinese]1,2,3, [in Chinese]2,3, [in Chinese]2,3, [in Chinese]2,3, [in Chinese]2,3, and [in Chinese]2,3

Author Affiliations

  • 1School of Science, Civil Aviation University of China, Tianjin 300300
  • 2Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072
  • 3Key Laboratory of Optoelectronic Information Technical Science, Ministry of Education of China, Tianjin 300072


Micro-deposition of an aluminum film of 500-nm thickness on a quartz substrate was demonstrated by laser-induced forward transfer (LIFT) using a femtosecond laser pulse. With the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM), the dependence of the morphology of deposited aluminum film on the irradiated laser pulse energy was investigated. As the laser fluence was slightly above the threshold fluence, the higher pressure of plasma for the thicker film made the free surface of solid phase burst out, which resulted in that not only the solid material was sputtered but also the deposited film in the liquid state was made irregularly.


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