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Received: Apr. 17, 2020
Accepted: Jul. 23, 2020
Posted: Jul. 24, 2020
Published Online: Sep. 11, 2020
The Author Email: Aditya Malik (amalik@ece.ucsb.edu)
DOI: 10.1364/PRJ.394726
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Aditya Malik, Joel Guo, Minh A. Tran, Geza Kurczveil, Di Liang, John E. Bowers. Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon[J]. Photonics Research, 2020, 8(10): 10001551
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Silicon Photonics
Photonics Research, Vol. 8, Issue 10, 10001551 (2020)
Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon 
Aditya Malik1,†,*, Joel Guo1,†, Minh A. Tran1,2,†, Geza Kurczveil3, Di Liang3, and John E. Bowers1
Author Affiliations
- 1Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106, USA
- 2Nexus Photonics, Goleta, California 93117, USA
- 3Hewlett Packard Labs, Palo Alto, California 94304, USA
Abstract
Heterogeneously integrated lasers in the O-band are a key component in realizing low-power optical interconnects for data centers and high-performance computing. Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds, small linewidth enhancement factor, and low sensitivity to reflections. Here, we present widely tunable quantum-dot lasers heterogeneously integrated on silicon-on-insulator substrate. The tuning mechanism is based on Vernier dual-ring geometry, and a 47 nm tuning range with 52 dB side-mode suppression ratio is observed. These parameters show an increase to 52 nm and 58 dB, respectively, when an additional wavelength filter in the form of a Mach–Zehnder interferometer is added to the cavity. The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.
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