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  • Received: Jun. 22, 2019

    Accepted: Aug. 6, 2019

    Posted: Nov. 27, 2019

    Published Online: Nov. 26, 2019

    The Author Email: Lingxue Wang (neobull@bit.edu.cn)

    DOI: 10.3788/COL201917.122401

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    Haijuan Cheng, Miao Dong, Qinwen Tan, Linghai Meng, Yi Cai, Jie Jiang, Weisheng Yang, Haizheng Zhong, Lingxue Wang. Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium[J]. Chinese Optics Letters, 2019, 17(12): 122401

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Chinese Optics Letters, Vol. 17, Issue 12, 122401 (2019)

Broadband mid-IR antireflective Reuleaux-triangle-shaped hole array on germanium

Haijuan Cheng1,2, Miao Dong1, Qinwen Tan1, Linghai Meng3, Yi Cai1, Jie Jiang2, Weisheng Yang2, Haizheng Zhong3, and Lingxue Wang1,*

Author Affiliations

  • 1Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 2Yunnan KIRO - CH Photonics Co., Ltd., Kunming 650223, China
  • 3School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China

Abstract

A gradient-index Reuleaux-triangle-shaped hole array was fabricated on germanium (Ge) by nanoimprint lithography and inductively coupled plasma processing as a broadband mid-infrared (IR) antireflective surface. The interaction between the {111} planes of cubic crystalline Ge and a circular mold successfully produced an orderly and periodically distributed Reuleaux-triangle-shaped hole array. As a result, the average transmittance increased 15.67% over the waveband at 3–12 μm and remained stable at the incidence angle of up to 60°. The vertices of the Reuleaux triangle showed local enhancement of the electric field intensities due to interference of the incident and reflected radiation fields. It was also found that nonuniform hole depths acted to modulate the transmittance over the 3–12 μm waveband.