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  • Received: Jul. 15, 2019

    Accepted: Nov. 5, 2019

    Posted: Nov. 8, 2019

    Published Online: Dec. 23, 2019

    The Author Email: Mingming Jiang (mmjiang@nuaa.edu.cn)

    DOI: 10.1364/PRJ.8.000091

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    Zhipeng Sun, Mingming Jiang, Wangqi Mao, Caixia Kan, Chongxin Shan, Dezhen Shen. Nonequilibrium hot-electron-induced wavelength-tunable incandescent-type light sources[J]. Photonics Research, 2020, 8(1): 01000091

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Photonics Research, Vol. 8, Issue 1, 01000091 (2020)

Nonequilibrium hot-electron-induced wavelength-tunable incandescent-type light sources 

Zhipeng Sun1,2, Mingming Jiang1,3,*, Wangqi Mao3, Caixia Kan3, Chongxin Shan1,4,5, and Dezhen Shen1,6

Author Affiliations

  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 4School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
  • 5e-mail: cxshan@zzu.edu.cn
  • 6e-mail: shendz@ciomp.ac.cn

Abstract

The collective oscillation of electrons located in the conduction band of metal nanostructures being still energized, with the energy up to the bulk plasmon frequency, are called nonequilibrium hot electrons. It can lead to the state-filling effect in the energy band of the neighboring semiconductor. Here, we report on the incandescent-type light source composed of Au nanorods decorated with single Ga-doped ZnO microwire (AuNRs@ZnO:Ga MW). Benefiting from Au nanorods with controlled aspect ratio, wavelength-tunable incandescent-type lighting was achieved, with the dominating emission peaks tuning from visible to near-infrared spectral regions. The intrinsic mechanism was found that tunable nonequilibrium distribution of hot electrons in ZnO:Ga MW, injected from Au nanorods, can be responsible for the tuning emission features. Apart from the modification over the composition, bandgap engineering, doping level, etc., the realization of electrically driving the generation and injection of nonequilibrium hot electrons from single ZnO:Ga MW with Au nanostructure coating may provide a promising platform to construct electronics and optoelectronics devices, such as electric spasers and hot-carrier-induced tunneling diodes.

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