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  • Received: Jun. 7, 2004

    Accepted: --

    Posted: Jun. 6, 2006

    Published Online: Jun. 6, 2006

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    Hongbin Yu, Haiqinq Chen, Jun Li, Chao Wang. An in situ growth method for property control of LPCVD polysilicon film[J]. Chinese Optics Letters, 2004, 2(8): 489

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Chinese Optics Letters, Vol. 2, Issue 8, 489 (2004)

An in situ growth method for property control of LPCVD polysilicon film

Hongbin Yu, Haiqinq Chen, Jun Li, and Chao Wang

Author Affiliations

  • Department of Optoelectronics Engineering, Huazhong University of Science and Technology, Wuhan 430074

Abstract

Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multi-layer concept is presented to control the property for as-deposited polysilicon. A 3-μm-thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.

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