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On the Cover
Dielectric Metasurfaces for Distance Measurements and 3D Imaging
Advanced PhotonicsVol. 1, Issue 3
On the Cover
Acousto-optical modulation of thin film lithium niobate waveguide devices
Photonics ResearchVol. 7, Issue 9
On the Cover
Full vectorial feature of second-harmonic generation with full Poincaré beams
Chinese Optics LettersVol. 17, Issue 9

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Optics Frontier: The 12th International Conference on Information Optics and Photonics (CIOP2020)

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27-30 July 2020

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The 4th International symposium series on High Power Laser Science and Engineering

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Latest News

12

Oct.2019

Full vectorial feature of second-harmonic generation with full Poincaré beams

Full Poincaré (FP) beams, possessing inhomogeneous polarization covering the entire surface of Poincaré sphere in the cross section of light, have attracted tremendous attentions in optical communication, optical micromanipulation, optical imaging, and quantum information processing. Until now, the generation and manipulation of FP beams were merely implemented within the frame of linear optics. Whereas, the manipulation of FP beams via nonlinear optical processes has not yet been fully explored, which, however, may greatly enrich the applications of FP beams.

12

Oct.2019

Acousto-optical modulation of thin film lithium niobate waveguide devices

Acousto-optic (AO) effect, which describes the interaction between light and sound waves, is extensively used to build up frequency shifter, tunable filter and light beam deflectors, leading to applications including laser Q-switching/mode-locking, signal processing and manipulation of light beams. Among all the acousto-optic active materials, lithium niobate (LN) is one of the most attractive materials because of its high piezoelectric coefficients enabling efficient generation of surface acoustic waves (SAW) through interdigital transducer (IDT) technology. Compared with the state-of-art AO modulator fabricated on other piezoelectric materials such as GaAs, LN exhibits a higher electromechanical coupling coefficient, which dramatically simplifies the design of SAW devices and facilitates matching to radio frequency (RF) driving sources in a much smaller form factor. In addition, the strong photo-elastic effect enables efficient photon-phonon interactions in such material. These properties have made LN one of the most promising materials for realizing integrated AO devices for inertial sensing, holographic storage/imaging and beam steering applications. However, conventional AO devices built on bulk LN wafers suffer from the limited AO interaction due to the weak light confinement in waveguide structures created by titanium-indiffusion and proton exchange methods. Typical waveguide mode size is in the dozens of square micrometers (μm2), and the bend radius on the order of centimeters, resulting in relatively large device footprint and hindering high density integration.