• Frontiers of Optoelectronics
  • Vol. 9, Issue 1, 87 (2016)
Zhiqian WU1、2, Yue SHEN2、*, Xiaoqiang LI1、3, Qing YANG3, and Shisheng LIN1、3
Author Affiliations
  • 1College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
  • 2State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering,
  • 3State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
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    Abstract

    The rectifying behavior between graphene and semiconductors makes novel type of solar cells, photodetectors and light emitting diodes (LEDs). The interface between graphene and ZnO is the key for the performance of the optoelectronic devices. Herein, we find that green light emission is very strong for the forward biased graphene/ZnO nanowire van derWaals heterostructure.We correlated the green light emission with the surface defects locating at the ZnO nanowire surface through the detailed high resolution transmission electron microscopy and photoluminescence measurements. We pointed out engineering the surface of ZnO nanowires could bring a dimension of designing graphene/ZnO LEDs, which could be extended to other types of graphene/semiconductor heterostructure based optoelectronic devices.
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    Zhiqian WU, Yue SHEN, Xiaoqiang LI, Qing YANG, Shisheng LIN. Green light-emitting diode based on graphene-ZnO nanowire van der Waals heterostructure[J]. Frontiers of Optoelectronics, 2016, 9(1): 87
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    Category: RESEARCH ARTICLE
    Received: Jan. 6, 2016
    Accepted: Jan. 14, 2016
    Posted: Jan. 1, 2016
    Published Online: Oct. 21, 2016
    The Author Email: SHEN Yue (shenyue1213@hust.edu.cn)