• Optoelectronics Letters
  • Vol. 10, Issue 4, 250 (2014)
Gui-chu CHEN1、2、* and Guang-han FAN2
Author Affiliations
  • 1Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China
  • 2Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China
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    Abstract

    The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. Thesimulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, whichis mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reportedexperimental results perfectly.
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    CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250
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    Received: Mar. 10, 2014
    Accepted: --
    Posted: Apr. 1, 2014
    Published Online: Jul. 13, 2020
    The Author Email: Gui-chu CHEN (gchenbox@126.com)