• Frontiers of Optoelectronics
  • Vol. 6, Issue 2, 199 (2013)
Abbas GHADIMI1、*, Vahid AHMADI2, and Fatemeh SHAHSHAHANI3
Author Affiliations
  • 1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 145151775, Iran
  • 2Department of Electrical Engineering, Tarbiat Modares University, Tehran 14115-194, Iran
  • 3Department of Physics, Alzahra University, Tehran 1993893973, Iran
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    Abstract

    This paper presents a new method to increase the speed of the separated absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD). This improvement is obtained by adding a new thin charge layer between absorption and grading layers, with assuming the non-uniform electric field in different regions of the structure. In addition, a circuit model of the proposed structure is extracted, using carrier rate equations. Also, to achieve the optimum structure, it is tried to have trade-offs among thickness of the layers and have proper tuning of physical parameters. Eventually, frequency and transient response are investigated and it is shown that, in comparison with the previous conventional structure, significant improvements in gain-bandwidth product, speed and also in breakdown voltage are attained.
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    Abbas GHADIMI, Vahid AHMADI, Fatemeh SHAHSHAHANI. SAGCM avalanche photodiode with additional layer and nonuniform electric field[J]. Frontiers of Optoelectronics, 2013, 6(2): 199
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    Category: RESEARCH ARTICLE
    Received: Jan. 31, 2013
    Accepted: Feb. 19, 2013
    Posted: Feb. 1, 2013
    Published Online: Mar. 3, 2014
    The Author Email: GHADIMI Abbas (ghadimi555@yahoo.com)