Contents
2016
Volume: 12 Issue 6
19 Article(s)
Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer
Qiu-lin WEI, Zuo-xing GUO, Lei ZHAO, Liang ZHAO, De-zeng YUAN, Guo-qing MIAO, and Mao-sheng XIA
Optoelectronics Letters
  • Publication Date: Jan. 01, 1900
  • Vol.12 Issue, 6 441 (2016)
Research on structure of Cu2ZnSn(S, Se)4thin films with high Sn-related phases
Peng-yu LI, Yu-ming XUE, Hao LIU, Dan XIA, Dian-you SONG, Shao-jun FENG, Hai-tao SUN, Bing-bing YU, and Zai-xiang QIAO
Optoelectronics Letters
  • Publication Date: Jan. 01, 1900
  • Vol.12 Issue, 6 446 (2016)
Investigation on random access in a VLC system with multipacket reception in the presence of hidden devices and obstructions
Wen-jing CAI, Xue-fen CHI, and Lin-lin ZHAO
Optoelectronics Letters
  • Publication Date: Jan. 01, 1900
  • Vol.12 Issue, 6 455 (2016)
An optical sensor for hydrogen sulfide detection in open path using WMS-2f/1f technique
Li-mei SONG, Li-wen LIU, Yan-gang YANG, Qing-hua GUO, and Jiang-tao XI
An optical hydrogen sulfide (H2S) sensor based on wavelength modulation spectroscopy with the second harmonic (2f) corrected by the first harmonic (1f) signal (WMS-2f/1f) is developed using a distributed feedback (DFB) laser emitting at 1.578 μm and a homemade gas cell with 1-m-long optical path length. The novel senso
Optoelectronics Letters
  • Publication Date: Jan. 01, 1900
  • Vol.12 Issue, 6 465 (2016)
Research on measurement-device-independent quantum key distribution based on an air-water channel
Yuan-yuan ZHOU, Xue-jun ZHOU, Hua-bin XU, and Kang CHENG
Optoelectronics Letters
  • Publication Date: Jan. 01, 1900
  • Vol.12 Issue, 6 469 (2016)