• Optoelectronics Letters
  • Vol. 8, Issue 6, 449 (2012)
Shen-jiang WU1、2、*, Jun-hong SU2, and Wen-qi WANG1
Author Affiliations
  • 1North Institute of Information Engineering, Xi’an Technological University, Xi’an 710032, China
  • 2Key Laboratory of Film Technology and Optical Measurement, Xi’an Technological University, Xi’an 710032, China
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    Abstract

    Based on the ion beam sputtering deposition technology, ZnO thin films are deposited on the glass substrate. The four-factor and three-level L9(34) orthogonal experiment is used to obtain the best technological parameters of the deposited ZnO thin films, which are the discharge voltage of 3.5 kV, the oxygen current capacity of 8 sccm, the coil current of 8 A and the distance between target and substrate of 140 mm. The purity of the deposited ZnO thin film is 85.77%, and it has good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source are advanced, and the ion beam sputtering deposition technology can be used to deposit the orientation preferred thin films with good performance.
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    WU Shen-jiang, SU Jun-hong, WANG Wen-qi. Structural and optical properties of ZnO films prepared by ion beam sputtering[J]. Optoelectronics Letters, 2012, 8(6): 449
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    Received: May. 13, 2012
    Accepted: --
    Posted: Jun. 1, 2012
    Published Online: Jul. 12, 2017
    The Author Email: Shen-jiang WU (bxait@xatu.edu.cn)