• Optoelectronics Letters
  • Vol. 8, Issue 6, 405 (2012)
Ya-nan MA*, Bin LUO, Wei PAN, Lian-shan YAN, Xi-hua ZOU, An-lin YI, Jia YE, and Kun-hua WEN
Author Affiliations
  • School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
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    Abstract

    We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
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    MA Ya-nan, LUO Bin, PAN Wei, YAN Lian-shan, ZOU Xi-hua, YI An-lin, YE Jia, WEN Kun-hua. Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure[J]. Optoelectronics Letters, 2012, 8(6): 405
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    Received: Jul. 2, 2012
    Accepted: --
    Posted: Jun. 1, 2012
    Published Online: Jul. 12, 2017
    The Author Email: Ya-nan MA (mayananaa@sohu.com)